Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis

被引：3
作者：
Sokolov, LV
Deryabin, AS
Yakimov, AI
Pchelyakov, OP
Dvurechenskii, AV
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
[2] Tomsk VV Kuibyshev State Univ, Tomsk 634050, Russia
来源：
PHYSICS OF THE SOLID STATE | 2004年 / 46卷 / 01期
关键词：
Spectroscopy; State Physics; Oscillation Period; Energy Spacing; Differential Conductivity;
D O I：
10.1134/1.1641929
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A CaF2/Ge/CaF2/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam epitaxy. A negative differential conductivity and conductivity oscillations caused by resonant hole tunneling were observed at room temperature. The energy spacing between the levels in quantum dots, as determined from the oscillation period, is 40-50 meV depending on the Ge dot size. (C) 2004 MAIK "Nauka / Interperiodica".
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页码：89 / 91
页数：3
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