共 50 条
- [41] Comparison of chargre collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 591 (01): : 178 - 180
- [42] ANISOTROPY OF CONDUCTIVITY DUE TO WARM HOLES IN P-TYPE GERMANIUM AND P-TYPE SILICON ZEITSCHRIFT FUR PHYSIK, 1968, 212 (02): : 183 - +
- [44] OPTICAL QUENCHING OF PHOTOVOLTAIC EFFECT IN SCHOTTKY-BARRIER STRUCTURES MADE OF P-TYPE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1180 - 1180
- [45] First results on the charge collection properties of segmented detectors made with p-type bulk silicon NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 487 (03): : 465 - 470
- [46] SURFACE-BARRIER DETECTORS MADE OF ULTRAHIGH PURITY P-TYPE SILICON-CRYSTALS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 196 (01): : 137 - 141
- [47] PHOTO-RESISTORS MADE OF P-TYPE SILICON COMPENSATED BY RADIATION-DEFECT CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (12): : 1410 - 1411
- [48] Interaction of the P-type cardiotoxin with phospholipid membranes EUROPEAN JOURNAL OF BIOCHEMISTRY, 2003, 270 (09): : 2038 - 2046
- [49] THERMISTOR MADE OF p-TYPE SYNTHETIC DIAMOND. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1581 - 1582
- [50] SCHOTTKY DIODES MADE OF COMPENSATED P-TYPE INP SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 374 - 376