Extremely high T0-values (∼450 K) of long-wavelength (∼15 μm), low-threshold-current-density quantum-cascade lasers based on the indirect pump scheme

被引：37

作者：

Fujita, Kazuue ^{[1
]}

Yamanishi, Masamichi ^{[1
]}

Edamura, Tadataka ^{[1
]}

Sugiyama, Atsushi ^{[2
]}

Furuta, Shinichi ^{[1
]}

机构：

[1] Hamamatsu Photon KK, Cent Res Labs, Hamakita Ku, Shizuoka 4348601, Japan

[2] Hamamatsu Photon KK, Dev Ctr Laser Devices, Hamakita Ku, Shizuoka 4348601, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 20期

关键词：

ROOM-TEMPERATURE;

D O I：

10.1063/1.3518487

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high device performance of a long-wavelength (similar to 15 mu m), InGaAs/InAlAs, Fabry-Perot quantum-cascade laser based on the indirect pump scheme is reported. As a result of felicitous designing of the active region and waveguide structure, a low threshold-current-density of similar to 3.5 kA/cm(2), a high maximum output power of similar to 216 mW, and a high slope efficiency of similar to 346 mW/A, all at room temperature are obtained. The observed extremely high characteristic temperature of threshold current, T-0 similar to 450 K over wide temperature range, 320-380 K is ascribed to a strong suppression of electron populations in injectors, which are specifically visualized in the indirect pump scheme. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518487]

引用

页数：3

共 5 条

[1] Indirect Pump Scheme for Quantum-Cascade Lasers: Electron Transport and Very High T0-Values
Yamanishi, Masamichi
Fujita, Kazuue
Edamura, Tadataka
Kan, Hirofumi
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 836 - 837
[2] Indirect pump scheme for quantum cascade lasers: dynamics of electron-transport and very high T0-values
Yamanishi, Masamichi
Fujita, Kazuue
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Kan, Hirofumi
OPTICS EXPRESS, 2008, 16 (25): : 20748 - 20758
[3] Long-wavelength (λ ≈ 14 μm) Quantum Cascade Lasers with Low Threshold and High Characteristic Temperature (∼ 300 K)
Huang, Xue
Charles, William O.
Gmachl, Claire F.
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2011,
[4] Low threshold current, high efficiency InGaAsPN based long-wavelength quantum well lasers
Gokhale, Milind R.
Wei, Jian
Studenkov, Pavel
Wang, Hongsheng
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[5] High T0 (140K) and low threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates
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Shoji, H
Kusunoki, T
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Uchida, T
Nishijima, Y
Nakajima, K
Ishikawa, H
ELECTRONICS LETTERS, 1997, 33 (21) : 1795 - 1797

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