Transparent and flexible electrode composed of a graphene multilayer interlayer-doped with MoO3

被引:8
作者
Cho, Eunho [3 ]
Cha, Sukgyun [1 ,2 ]
Kim, Youngkwun [4 ]
Kim, Changsoon [1 ]
机构
[1] Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Seoul 08826, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea
[3] LG Display Co Ltd, Seoul 07796, South Korea
[4] LG Display Co Ltd, Gyeonggi Do 10845, South Korea
关键词
Graphene; Charge-transfer doping; MoO3; Transparent electrodes; Flexible electrodes; PHOTOVOLTAIC CELLS; LAYER; FILMS;
D O I
10.1016/j.orgel.2019.105437
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We demonstrate a flexible and transparent electrode consisting of a graphene multilayer that is interlayer-doped by layers of MoO3, a material that has attractive features as a graphene dopant but has not been used as such due to difficulties in fabrication. The fabrication of MoO3-interlayer-doped graphene multilayer (M-i-d GML) is enabled by successive applications of a modified wet-transfer of a graphene monolayer onto an elastomeric stamp precoated with a diffusion-blocking layer and its subsequent transfer onto a thermally evaporated MoO3 layer. By performing Raman spectroscopy and sheet resistance measurements, we show that charge-transfer doping of graphene occurs at both the top and bottom graphene-MoO3 interfaces of each graphene layer in a Mi-d GML. In comparison with a graphene multilayer doped only by a top MoO3 layer, M-i-d GMLs suffer less from the trade-off between optical transmittance and sheet resistance. Moreover, the characteristics of a green phosphorescent organic light-emitting device (OLED) employing a M-i-d GML bottom electrode are very similar to those of an OLED with an indium tin oxide anode, indicating that M-i-d GMLs are a promising candidate for transparent and flexible electrodes in optoelectronic and wearable applications.
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页数:6
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