Atomic structure and Mott nature of the insulating charge density wave phase of 1T-TaS2
被引:24
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Petkov, V
[1
]
Peralta, J. E.
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Cent Michigan Univ, Dept Phys & Sci Adv Mat Program, Mt Pleasant, MI 48858 USACent Michigan Univ, Dept Phys & Sci Adv Mat Program, Mt Pleasant, MI 48858 USA
Peralta, J. E.
[1
]
Aoun, B.
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Fullrmc Inc, San Antonio, TX 78255 USACent Michigan Univ, Dept Phys & Sci Adv Mat Program, Mt Pleasant, MI 48858 USA
Aoun, B.
[2
]
Ren, Y.
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Argonne Natl Lab, Xray Sci Div, Adv Photon Source, Argonne, IL 60439 USA
City Univ Hong Kong, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaCent Michigan Univ, Dept Phys & Sci Adv Mat Program, Mt Pleasant, MI 48858 USA
Ren, Y.
[3
,4
]
机构:
[1] Cent Michigan Univ, Dept Phys & Sci Adv Mat Program, Mt Pleasant, MI 48858 USA
[2] Fullrmc Inc, San Antonio, TX 78255 USA
[3] Argonne Natl Lab, Xray Sci Div, Adv Photon Source, Argonne, IL 60439 USA
[4] City Univ Hong Kong, Dept Phys, Kowloon, Hong Kong, Peoples R China
charge density waves;
atomic structure;
total x-ray scattering;
X-RAY;
REFINEMENT;
D O I:
10.1088/1361-648X/ac77cf
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
Using x-ray pair distribution function (PDF) analysis and computer modeling, we explore structure models for the complex charge density wave (CDW) phases of layered 1T-TaS2 that both well capture their atomic-level features and are amenable to electronic structure calculations. The models give the most probable position of constituent atoms in terms of 3D repetitive unit cells comprising a minimum number of Ta-S layers. Structure modeling results confirm the emergence of star-of-David (SD) like clusters of Ta atoms in the high-temperature incommensurate (IC) CDW phase and show that, contrary to the suggestions of recent studies, the low-temperature commensurate (C) CDW phase expands upon cooling thus reducing lattice strain. The C-CDW phase is also found to preserve the stacking sequence of Ta-S layers found in the room temperature, nearly commensurate (NC) CDW phase to a large extent. DFT based on the PDF refined model shows that bulk C-CDW 1T-TaS2 also preserves the insulating state of individual layers of SD clusters, favoring the Mott physics description of the metal-to-insulator (NC-CDW to C-CDW) phase transition in 1T-TaS2. Our work highlights the importance of using precise crystal structure models in determining the nature of electronic phases in complex materials.
机构:
Univ Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, JapanUniv Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, Japan
Ren, Qianhui
Suzuki, Takeshi
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Univ Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, JapanUniv Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, Japan
Suzuki, Takeshi
Kanai, Teruto
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Univ Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, JapanUniv Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, Japan
Kanai, Teruto
Itatani, Jiro
论文数: 0引用数: 0
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Univ Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, JapanUniv Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, Japan
Itatani, Jiro
Shin, Shik
论文数: 0引用数: 0
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Univ Tokyo, Off Univ Prof, Kashiwa, Chiba 2778581, Japan
Univ Tokyo, Mat Innovat Res Ctr, Kashiwa, Chiba 2778561, JapanUniv Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, Japan
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Yonsei Univ, Dept Phys, Seoul 03722, South KoreaYonsei Univ, Dept Phys, Seoul 03722, South Korea
Yang, Hyungryul
Lee, Byeongin
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Yonsei Univ, Dept Phys, Seoul 03722, South KoreaYonsei Univ, Dept Phys, Seoul 03722, South Korea
Lee, Byeongin
Bang, Junho
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Yonsei Univ, Dept Phys, Seoul 03722, South KoreaYonsei Univ, Dept Phys, Seoul 03722, South Korea
Bang, Junho
Kim, Sunghun
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Ajou Univ, Dept Phys, Suwon 16499, South KoreaYonsei Univ, Dept Phys, Seoul 03722, South Korea
Kim, Sunghun
Wulferding, Dirk
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Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea
Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaYonsei Univ, Dept Phys, Seoul 03722, South Korea
Wulferding, Dirk
Lee, Sung-Hoon
论文数: 0引用数: 0
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Kyung Hee Univ, Dept Appl Phys, Yongin 17104, South KoreaYonsei Univ, Dept Phys, Seoul 03722, South Korea
机构:
ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R ChinaShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
Shen, Shiwei
Yuan, Xiaoqiu
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ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R ChinaShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
Yuan, Xiaoqiu
Wen, Chenhaoping
论文数: 0引用数: 0
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ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R ChinaShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
Wen, Chenhaoping
Gao, Jingjing
论文数: 0引用数: 0
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机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Univ Sci & Technol China, Hefei 230026, Peoples R ChinaShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
Gao, Jingjing
Luo, Xuan
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
Luo, Xuan
Lu, Xinghua
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Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R ChinaShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
Lu, Xinghua
Sun, Yu-Ping
论文数: 0引用数: 0
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机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R ChinaShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
Sun, Yu-Ping
Yan, Shichao
论文数: 0引用数: 0
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机构:
ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R ChinaShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China