The response of (GeS2)x(Sb2S3)(1-x) thin films to illumination and annealing

被引：2

作者：

Knotek, P. ^{[1
]}

Kutalek, P. ^{[2
]}

Tichy, L. ^{[1
]}

机构：

[1] Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech Republic

[2] Univ Pardubice, Fac Chem Technol, Joint Lab Solid State Chem, Studentska 84, Pardubice 53210, Czech Republic

来源：

THIN SOLID FILMS | 2019年 / 676卷

关键词：

Ge-Sb-S chalcogenides; Thin films; Optical band gap; Illumination; Annealing; CHALCOGENIDE GLASSES; STRUCTURAL-PROPERTIES; DEPOSITION; TRANSITION;

D O I：

10.1016/j.tsf.2019.02.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous (GeS2)(x)(Sb2S3)((1-x)) films where 0.29 < x < 0.94 were prepared by thermal evaporation from previously synthetized bulk glass. The response of virgin and annealed states of films to the slightly over-band gap illumination with respect to the shift of the optical band gap (E-g(opt) ) and the slope of the optical absorption edge (B-1/2) was studied. The magnitude of photo-bleaching and photo-darkening varied with the molar fraction of GeS2 (x) (the average coordination number CN) while a maximum of photo-sensitivity was observed, with respect to the experimental error of chemical composition determination, at CN approximate to 2.6 (x approximate to 0.80). The spectral sensitivity of photo-darkening was studied for the annealed state of the most sensitive thin film.

引用

页码：113 / 119

页数：7

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