X-ray absorption in GaGdN:: A study of local structure

被引：25

作者：

Martinez-Criado, G. ^{[1
]}

Sancho-Juan, O.

Garro, N. ^{[2
]}

Sans, J. A. ^{[1
]}

Cantarero, A.

Susini, J. ^{[1
]}

Roever, M. ^{[3
,4
]}

Mai, D. -D. ^{[3
,4
]}

Bedoya-Pinto, A. ^{[3
,4
]}

Malindretos, J. ^{[3
,4
]}

Rizzi, A. ^{[3
,4
]}

机构：

[1] European Synchrotron Radiat Facil, Expt Div, F-38043 Grenoble, France

[2] Univ Valencia, Fdn Gen, Valencia 46071, Spain

[3] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany

[4] Univ Gottingen, Virtual Inst Spin Elect, D-37077 Gottingen, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2957984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we report on the incorporation of dilute Gd amounts into GaN films grown by molecular beam epitaxy. A combination of x-ray fluorescence with x-ray absorption spectroscopic techniques enabled us to examine not only the distribution of rare earth atoms in the GaN matrix but also the short-range structural order. Our results show Gd atoms in a trivalent state with tetrahedral coordination, thus substituting Ga in the wurtzite GaN structure. (C) 2008 American Institute of Physics.

引用

页数：3

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