Challenges and opportunities of MOVPE and THVPE/HVPE for nitride light emitting devices

被引：0

作者：

Matsumoto, K. ^{[1
]}

Yamaguchi, A. ^{[1
]}

Yano, Y. ^{[1
]}

Tokunaga, H. ^{[2
]}

Mishima, A. ^{[2
]}

Tomita, Y. ^{[1
]}

Yamaoka, Y. ^{[1
]}

Koseki, S. ^{[1
]}

Arimura, T. ^{[1
]}

机构：

[1] Taiyo Nippon Sanso Tsukuba Labs, 10 Ohkubo, Tsukuba, Ibaraki 3002611, Japan

[2] Taiyo Nippon Sanso Tsukuba Labs, Taiyo Nippon Sanso Cse, Tsukuba, Ibaraki, Japan

来源：

LIGHT-EMITTING DEVICES, MATERIALS, AND APPLICATIONS XXIV | 2020年 / 11302卷

关键词：

MOVPE; HVPE; THVPE; AlGaN; MQW; LED; bulk GaN; production cost; VAPOR-PHASE EPITAXY; GROWTH; ALN;

D O I：

10.1117/12.2543943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Challenges and opportunities of MOVPE and THVPE/HVPE for nitride light emitting devices are discussed. Attempts to grow uniform and high quality epitaxial layers for both visible and UV range are presented. In order to examine the possibility of using a bulk GaN substrate, cost parity condition of GaN on GaN LED compared with LED on sapphire is presented in terms of a lumen per dollar. It is important to improve through-put of HVPE for GaN substrate manufacturing. Tri-halide VPE (THVPE) is introduced as a newly evolving technology with a high growth rate of 300 mu m/h at a high growth temperature of 1250 degrees C, which may replace HVPE for a bulk GaN substrate. Economical consideration of the comparison of HVPE and THVPE is discussed. Regarding UVC LEDs, there is an option to use a high quality AlN template on sapphire which is fabricated by 1700 degrees C annealing at nitrogen with a face to face configuration. Possible cost reduction and remaining issue are described.

引用

页数：8

共 23 条

[1] High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers [J].

Akasaka, T ;

Gotoh, H ;

Saito, T ;

Makimoto, T .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3089-3091

[2] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[3] Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells [J].

Ban, Kazuhito ;

Yamamoto, Jun-ichi ;

Takeda, Kenichiro ;

Ide, Kimiyasu ;

Iwaya, Motoaki ;

Takeuchi, Tetsuya ;

Kamiyama, Satoshi ;

Akasaki, Isamu ;

Amano, Hiroshi .

APPLIED PHYSICS EXPRESS, 2011, 4 (05)

[4] The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN [J].

Chichibu, S. F. ;

Uedono, A. ;

Kojima, K. ;

Ikeda, H. ;

Fujito, K. ;

Takashima, S. ;

Edo, M. ;

Ueno, K. ;

Ishibashi, S. .

JOURNAL OF APPLIED PHYSICS, 2018, 123 (16)

[5] Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency [J].

Haller, C. ;

Carlin, J. -F. ;

Jacopin, G. ;

Martin, D. ;

Butte, R. ;

Grandjean, N. .

APPLIED PHYSICS LETTERS, 2017, 111 (26)

[6] Recent Progress of 220-280 nm-band AlGaN based deep-UV LEDs [J].

Hirayama, Hideki .

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XIV, 2010, 7617

[7] Development of InGaN-based red LED grown on (0001) polar surface [J].

Hwang, Jong-Ii ;

Hashimoto, Rei ;

Saito, Shinji ;

Nunoue, Shinya .

APPLIED PHYSICS EXPRESS, 2014, 7 (07)

[8] Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells [J].

Iida, Daisuke ;

Lu, Shen ;

Hirahara, Sota ;

Niwa, Kazumasa ;

Kamiyama, Satoshi ;

Ohkawa, Kazuhiro .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (05)

[9] Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor [J].

Ikenaga, Kazutada ;

Mishima, Akira ;

Yano, Yoshiki ;

Tabuchi, Toshiya ;

Matsumoto, Koh .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (05)

[10] Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si [J].

Jung, Daehwan ;

Herrick, Robert ;

Norman, Justin ;

Turnlund, Katherine ;

Jan, Catherine ;

Feng, Kaiyin ;

Gossard, Arthur C. ;

Bowers, John E. .

APPLIED PHYSICS LETTERS, 2018, 112 (15)

← 1 2 3 →