Determination of Photoelectric Parameters of Hydrogenated Amorphous Silicon by the PhotoElectromotive-Force Technique

被引：0

作者：

Martinez, H. E. ^{[1
]}

Mansurova, S. ^{[1
]}

Cosme, I. ^{[1
]}

Kosarev, A. ^{[1
]}

Mayorga Cruz, D. ^{[2
]}

机构：

[1] Inst Nacl Astrofis Opt & Electr, Elect & Opt Dept, Puebla 72840, Mexico

[2] UAEM, CIICAP, Cuernavaca 62209, Morelos, Mexico

来源：

2016 13TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE) | 2016年

关键词：

amorphous silicon; non-steady-state p-EMF; diffusion lengths; FILMS;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Measurements of non-steady-state P-EMF current as a function temporal and spatial modulation frequencies were performed on intrinsic hydrogenated amorphous silicon film at 633 nm wavelength. The experimental behavior of photo-EMF current is well described by a bipolar photoconductivity model. Material photoelectric parameters such as majority carriers' lifetime, dielectric relaxation time, electron and holes diffusion lengths and their mobility-lifetime products were estimated from the experimental data.

引用

页数：4

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