Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays

被引:1
作者
Shih, GA [1 ]
Huang, JJ [1 ]
机构
[1] Natl Taiwan Univ, Grad Inst Elect Opt Engn, Taipei 10617, Taiwan
关键词
GaN; heterojunction field effect transistor (HFET); light-emitting diode (LED); microdisplays;
D O I
10.1109/LED.2005.857721
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a novel GaN-based heterojunction field effect transistor (HFET) active-matrix circuit for an light-emitting diode (LED) microdisplay. Simulation results are shown with basic and improved circuits. Variations of process and material growth conditions are discussed by correlating device parameters with LED flow currents in this circuit. It shows that the HFET-LED control circuit approach provides a stability path to mitigate variations of LED currents during operations.
引用
收藏
页码:808 / 810
页数:3
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