The Bi-IGBT: a low losses power structure by IGBT parallel association

被引：2
|
作者：
Caramel, C.
De Maglie, R.
Austin, P.
Sanchez, J. L.
Le Gal, J.
Imbernon, E.
Laur, J. P.
Flores, D. [1 ]
Hidalgo, S.
Millan, J. [1 ]
Rebollo, J. [1 ]
机构：
[1] CSIC, Ctr Nacl Microelect, Cerdanyola Del Valles 08193, Spain
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 05期
关键词：
Computer simulation - Mathematical models - Voltage control;
D O I：
10.1088/0268-1242/23/5/055022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low losses IGBT structure, the Bi-IGBT, made up by the parallel association of a slow and a fast IGBT is presented in this work. The structure has been simulated using Saber (R) tools including the IGBT physical models and compared with experimental results. Fabricated Bi-IGBT devices and the two constitutive IGBTs have been extensively characterized showing a good agreement with simulated electrical performances. It is also shown that the proposed Bi-IGBT combines the advantages of a low on-state voltage drop and a short current tail, providing a 30% reduction of the current tail. Finally, a simplified driver solution is proposed and analyzed by simulation.
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页数：8
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