Pentacene organic-thin-film field-effect tansistors

被引：0

作者：

Zhang, SM ^{[1
]}

Shi, JW ^{[1
]}

Liu, MD ^{[1
]}

Li, J ^{[1
]}

Guo, SX ^{[1
]}

Wang, W ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect & Engn, Natl Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2004年 / 21卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have fabricated organic thin-film transistors using the small-molecule polycyclic aromatic hydrocarbon pentacene as an active material. Devices were fabricated on glass substrates by using rf-magnetron sputtered amorphous aluminium as the gate electrode, and gelatinized polyimide as the gate dielectric with physical vapour grown pentacene thin films pasted on it as the active layer, then using rf-magnetron sputtered amorphous aluminium as the source and drain contacts. Field effect mobility and threshold voltage is 0.092cm(2)/Vs and 14.5 V, respectively. On-off current ratio is nearly 10(3).

引用

页码：164 / 165

页数：2

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