A Bottom-Up Approach toward All-Solution-Processed High-Efficiency Cu(In,Ga)S2 Photocathodes for Solar Water Splitting

被引:101
作者
Guijarro, Nestor [1 ]
Prevot, Mathieu S. [1 ]
Yu, Xiaoyun [1 ]
Jeanbourquin, Xavier A. [1 ]
Bornoz, Pauline [1 ]
Bouree, Wiktor [1 ]
Johnson, Melissa [1 ]
Le Formal, Florian [1 ]
Sivula, Kevin [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Mol Engn Optoelect Nanomat, Stn 6, CH-1015 Lausanne, Switzerland
基金
瑞士国家科学基金会;
关键词
THIN-FILMS; HYDROGEN EVOLUTION; STRUCTURAL-PROPERTIES; SURFACE MODIFICATION; NANOCRYSTAL INKS; GRAIN-GROWTH; CUINS2; CHALCOPYRITE; CDS; PHASES;
D O I
10.1002/aenm.201501949
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The development of solution-processable routes to prepare efficient photoelectrodes for water splitting is highly desirable to reduce manufacturing costs. Recently, sulfide chalcopyrites (Cu(In,Ga)S-2) have attracted attention as photocathodes for hydrogen evolution owing to their outstanding optoelectronic properties and their band gap-wider than their selenide counterparts-which can potentially increase the attainable photovoltage. A straightforward and all-solution-processable approach for the fabrication of highly efficient photocathodes based on Cu(In,Ga)S-2 is reported for the first time. It is demonstrated that semiconductor nanocrystals can be successfully employed as building blocks to prepare phase-pure microcrystalline thin films by incorporating different additives (Sb, Bi, Mg) that promote the coalescence of the nanocrystals during annealing. Importantly, the grain size is directly correlated to improved charge transport for Sb and Bi additives, but it is shown that secondary effects can be detrimental to performance even with large grains (for Mg). For optimized electrodes, the sequential deposition of thin layers of n-type CdS and TiO2 by solution-based methods, and platinum as an electrocatalyst, leads to stable photocurrents saturating at 8.0 mA cm(-2) and onsetting at similar to 0.6 V versus RHE under AM 1.5G illumination for CuInS2 films. Electrodes prepared by our method rival the state-of-the-art performance for these materials.
引用
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页数:13
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