N-Type Conjugated Polymer-Enabled Selective Dispersion of Semiconducting Carbon Nanotubes for Flexible CMOS-Like Circuits

被引:37
作者
Wang, Huiliang [1 ,2 ]
Li, Yaoxuan [1 ,2 ]
Jimenez-Oses, Gonzalo [3 ]
Liu, Peng [3 ]
Fang, Ya [1 ,2 ]
Zhang, Jie [4 ]
Lai, Ying-Chih [1 ,2 ,5 ]
Park, Steve [1 ,2 ]
Chen, Liwei [4 ]
Houk, Kendall N. [3 ]
Bao, Zhenan [1 ,2 ]
机构
[1] Stanford Univ, Dept Elect Engn, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[3] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA
[4] Chinese Acad Sci, I Lab, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Jiangsu, Peoples R China
[5] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
ambipolarity; carbon nanotubes; flexible circuits; n-type polymers; sorting; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; CHARGE-TRANSFER; SOLAR-CELLS; PERFORMANCE; ELECTRONICS; SEPARATION; SOLVENT; FABRICATION; COPOLYMERS;
D O I
10.1002/adfm.201404126
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Sorting of semiconducting single-walled carbon nanotubes (SWNTs) by conjugated polymers has attracted considerable attention recently because of its simplicity, high selectivity, and high yield. However, up to now, all the conjugated polymers used for SWNT sorting are electron-donating (p-type). Here, a high-mobility electron-accepting (n-type) polymer poly([N,N-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5-(2,2-bithiophene)) (P(NDI2OD-T2)) is utilized for the sorting of high-purity semiconducting SWNTs, as characterized by Raman spectroscopy, dielectric force spectroscopy and transistor measurements. In addition, the SWNTs sorted by P(NDI2OD-T2) have larger diameters than poly(3-dodecylthiophene) (P3DDT)-sorted SWNTs. Molecular dynamics simulations in explicit toluene demonstrate distinct linear or helical wrapping geometry between P(NDI2OD-T2) and different types of SWNTs, likely as a result of the strong interactions between the large aromatic core of the P(NDI2OD-T2) backbone and the hexagon path of SWNTs. By using high-mobility n-type P(NDI2OD-T2) as the sorting polymer, ambipolar SWNT transistors with better electron transport than that attained by P3DDT-sorted SWNTs are achieved. As a result, flexible negated AND and negated OR logic circuits from the same set of ambipolar transistors are fabricated, without the need for doping. The use of n-type polymers for sorting semiconducting SWNTs and achieving ambipolar SWNT transistor characteristics greatly simplifies the fabrication of flexible complementary metal-oxide-semiconductor-like SWNT logic circuits.
引用
收藏
页码:1837 / 1844
页数:8
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