Single-pole double-throw CMOS switches for 900-MHz and 2.4-GHZ applications on p- silicon substrates

被引:57
作者
Huang, FJ [1 ]
O, KK
机构
[1] Maxim Integrated Prod Inc, Boston Design Ctr, N Chelmsford, MA 01863 USA
[2] Univ Florida, Dept Elect & Comp Engn, Sil Microwave Integrated Circuits & Syst Res Grp, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
CMOS integrated circuits; impedance matching; microwave switches; MOSFET switches;
D O I
10.1109/JSSC.2003.820857
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 900-MHz single-pole double-throw (SPDT) switch with an insertion loss of 0.5 dB and a 2.4-GHz SPDT switch with an insertion loss of 0.8 dB were implemented using 3.3-V 0.35-mum NMOS transistors in a 0.18-mum bulk CMOS process utilizing 20-Omega(.)cm p(-) substrates. Impedance transformation was used to reduce the source and load impedances seen by the switch to increase the power handling capability. SPDT switches with 3042 impedance transformation networks exhibit 0.97-dB insertion loss and 24.3-dBm Output P-1dB when tuned for 900-MHz operation, and 1.10-dB insertion loss and 20.6-dBm Output P-1dB when tuned for 2.4-GHz operation. The 2.4-GHz switch is the first bulk CMOS switch which can be used for 802.11b wireless local area network applications.
引用
收藏
页码:35 / 41
页数:7
相关论文
共 19 条
[1]   RF circuit design aspects of spiral inductors on silicon [J].
Burghartz, JN ;
Edelstein, DC ;
Soyuer, M ;
Ainspan, HA ;
Jenkins, KA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (12) :2028-2034
[2]   Application of a new circuit design oriented Q extraction technique to inductors in silicon IC's [J].
Chen, T ;
Kim, K ;
O, K .
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :527-530
[3]   Effects of substrate resistances on LNA performance and a bondpad structure for reducing the effects in a silicon bipolar technology [J].
Colvin, JT ;
Bhatia, SS ;
O, KK .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (09) :1339-1344
[4]   A high-efficiency CMOS voltage doubler [J].
Favrat, P ;
Deval, P ;
Declercq, MJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (03) :410-416
[5]   The effects of substrate resistivity on RF component and circuit performance [J].
Floyd, BA ;
Hung, CM ;
O, KK .
PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2000, :164-166
[6]  
*HITT MICR CORP, 2003, DES GUID CAT
[7]  
Huang F.-J., 2001, ESSCIRC 2001. Proceedings of the 27th European Solid-State Circuits Conference, P432
[8]   A 0.5-μm CMOS T/R switch for 900-MHz wireless applications [J].
Huang, FJ ;
O, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (03) :486-492
[9]   Schottky-clamped NMOS transistors implemented in a conventional 0.8-μm CMOS process [J].
Huang, FJ ;
O, KK .
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (09) :326-328
[10]   A 900MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-μm CMOS process [J].
Huang, FJ ;
O, K .
PROCEEDINGS OF THE IEEE 2000 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2000, :341-344