Microstructure of femtosecond laser-induced grating in amorphous silicon

被引：45
|
作者：
Lee, GJ [1 ]
Park, J
Kim, EK
Lee, Y
Kim, KM
Cheong, H
Yoon, CS
Son, YD
Jang, J
机构：
[1] Hanyang Univ, Quantum Photon Sci Res Ctr, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[3] Sogang Univ, Dept Phys, Seoul 121742, South Korea
[4] Hanyang Univ, Div Adv Mat Sci, Seoul 133791, South Korea
[5] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
来源：
OPTICS EXPRESS | 2005年 / 13卷 / 17期
关键词：
D O I：
10.1364/OPEX.13.006445
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The femtosecond laser-induced grating (FLIG) formation and crystallization were investigated in amorphous silicon (a-Si) films, prepared on glass by plasma-enhanced chemical-vapor deposition. Probe-beam diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy were employed to characterize the diffraction properties and the microstructures of FLIGs. It was found that i) the FLIG can be regarded as a pattern of alternating a-Si and microcrystalline-silicon (mu c-Si) lines with a period of about 2 mu m, and ii) efficient grating formation and crystallization were achieved by high-intensity recording with a short writing period. (c) 2005 Optical Society of America.
引用
收藏
页码：6445 / 6453
页数：9
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