Analysis of High-Efficiency Power Amplifier Using Second Harmonic Manipulation: Inverse Class-F/J Amplifiers

被引:50
作者
Kim, Joon Hyung [1 ]
Lee, Sung Jun [1 ]
Park, Bong Hyuk [1 ]
Jang, Seung Hyun [1 ]
Jung, Jae Ho [1 ]
Park, Chul Soon [2 ]
机构
[1] Elect & Telecommun Res Inst, Mobile RF Team, Taejon 305700, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
关键词
Class-J; GaN; inverse class-F; nonlinear capacitance; power amplifier (PA); second harmonic manipulation; CLASS-F;
D O I
10.1109/TMTT.2011.2157354
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, an analysis of a power amplifier manipulated using a second harmonic (PA-2HM) is described using a remarkable correlation between the fundamental and second harmonic impedances. The output loading condition, made up of an optimum fundamental impedance mapped to the conditional second harmonic reactance, allows us to achieve a high-efficiency power amplifier (PA) with a simple output matching circuit. For the analysis, the output voltage and current waveforms are modeled in terms of their output loading in order to extend the output power and efficiency. Specific PA-2HM cases, inverse Class-F and Class-J modes, are analyzed using different second harmonic reactance conditions. The allowable second harmonic reactance for maintaining maximum efficiency has been found to be spread throughout a wide range. To justify the analysis, a harmonic load-pull simulation and measurement are conducted and compared with analysis results. For verification, a commercially available 60-W gallium-nitride (GaN) device was used for different types of PA (inverse Class-F and Class-J) with appropriate second harmonic impedance. In terms of the output power and drain efficiency, the measured results are in good agreement with not only computer-aided design simulations, but also with our analysis and load-pull results.
引用
收藏
页码:2024 / 2036
页数:13
相关论文
共 16 条
[1]  
[Anonymous], 2006, RF power amplifiers for wireless communications
[2]  
Colantonio P, 2000, INT J RF MICROW C E, V10, P19, DOI 10.1002/(SICI)1099-047X(200001)10:1<19::AID-MMCE4>3.0.CO
[3]  
2-G
[4]   Theory and Experimental Results of a Class F AB-C Doherty Power Amplifier [J].
Colantonio, Paolo ;
Giannini, Franco ;
Giofre, Rocco ;
Piazzon, Luca .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (08) :1936-1947
[5]  
Cripps S. C., 2006, ARTECH MICR
[6]   On the Continuity of High Efficiency Modes in Linear RF Power Amplifiers [J].
Cripps, Steve C. ;
Tasker, Paul J. ;
Clarke, Alan L. ;
Lees, Jonathan ;
Benedikt, Johannes .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (10) :665-667
[7]   A 33W GaN HEMT Doherty Amplifier with 55% Drain Efficiency for 2.6GHz Base Stations [J].
Deguchi, Hiroaki ;
Ui, Norihiko ;
Ebihara, Kaname ;
Inoue, Kazutaka ;
Yoshimura, Norihiro ;
Takahashi, Hidenori .
2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, :1273-1276
[8]  
INOUE A, 2004, IEEE MTT S INT MICR, P1947
[9]   High-Efficiency WCDMA Envelope Tracking Base-Station Amplifier Implemented With GaAs HVHBTs [J].
Jeong, Jinseong ;
Kimball, Donald F. ;
Kwak, Myoungbo ;
Draxler, Paul ;
Hsia, Chin ;
Steinbeiser, Craig ;
Landon, Thomas ;
Krutko, Oleh ;
Larson, Lawrence E. ;
Asbeck, Peter M. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (10) :2629-2639
[10]   High-Efficiency Hybrid EER Transmitter Using Optimized Power Amplifier [J].
Kim, Ildu ;
Woo, Young Yun ;
Kim, Jangheon ;
Moon, Junghwan ;
Kim, Jungjoon ;
Kim, Bumman .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (11) :2582-2593