Low-noise monolithic bipolar front-end for silicon drift Detectors

被引:0
|
作者
Dabrowski, W
Bialas, W
Bonazzola, G
Bonvicini, W
Casati, L
Ceretto, F
Giubellino, P [1 ]
Prest, M
Riccati, L
Zampa, N
机构
[1] Ist Nazl Fis Nucl, I-10125 Turin, Italy
[2] Ist Nazl Fis Nucl, Trieste, Italy
[3] Acad Min & Met, Fac Phys & Nucl Tech, Krakow, Poland
关键词
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A very low noise, 32-channel preamplifier/shaper chip has been designed for the analogue readout of silicon detectors. The circuit has been optimized in view of the operation of silicon drift detectors, which have very low capacitance and produce gaussian signals of sigma of few tens of ns. The chip (OLA) has been designed and manufactured using the SHPi full-custom bipolar process by Tektronix. Each channel is composed by a preamplifier, a shaper and a symmetrical line driver, which allows to drive either a positive and a negative single ended output separately on 50 Omega impedance or a differential twisted pair. The intrinsic peaking time of the circuit is similar to 60 ns, and the noise is below 250 electrons at zero input load capacitance. The power consumption is 2 mW/channel, mostly due to the output driver. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:270 / 278
页数:9
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