A W-band 4-bit phase shifter in multilayer scalable array systems

被引:0
|
作者
Shih, S. E. [1 ]
Duan, D. W. [1 ]
Fordham, O. [1 ]
Parmar, M. [1 ]
Tornquist, K. [1 ]
Zeng, X. [1 ]
Chang-Chien, P. [1 ]
Tsai, R. [1 ]
机构
[1] Northrop Grumman Space Technol, Redondo Beach, CA 90278 USA
关键词
GaAsHEMT; phase shifter; reflective-type phase shifter; W-band; wafer-scale assembly; wafer level package;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an ultra-compact W-band 4-bit phase shifter integrated in a 5-layer wafer-scale assembly phased array system. The phase shifter was implemented using a reflective-type circuit topology, consisting of a 3 dB Lange coupler and a pair of reflective loads. GaAs HEMT switches were used for switching the loads to achieve the desired phase shifts. On-wafer measurements of the single-bit test cells show phase deviations of 2.5 degrees from the target phase shifts and an insertion loss of 1.5 +/- 0.7 dB at 91.5 GHz, while the measured 4-bit phase shifter data shows an insertion loss of 6.9 +/- 1.1 dB and better than 10 dB return loss at 94 GHz. With its ultra-compact size, two 4-bit phase shifters can be fit into a 1.6 mm x 1.6 mm array cell. This phase shifter combines state-of-the-art performance and size. To our knowledge, this is the first reported W-band phase shifter fabricated for multilayer wafer-scale assembly in a phased array system.
引用
收藏
页码:79 / 82
页数:4
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