Reexamination of spin decoherence in semiconductor quantum dots from the equation-of-motion approach

被引:20
作者
Jiang, J. H. [1 ,2 ]
Wang, Y. Y. [2 ]
Wu, M. W. [1 ,2 ]
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci & Microscale, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
关键词
D O I
10.1103/PhysRevB.77.035323
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The longitudinal and transversal spin decoherence times, T-1 and T-2, in semiconductor quantum dots are investigated from the equation-of-motion approach for different magnetic fields, quantum dot sizes, and temperatures. Various mechanisms, such as the hyperfine interaction with the surrounding nuclei, the Dresselhaus spin-orbit coupling together with the electron-bulk-phonon interaction, the g-factor fluctuations, the direct spin-phonon coupling due to the phonon-induced strain, and the coaction of the electron-bulk- and/or surface-phonon interaction together with the hyperfine interaction are included. The relative contributions from these spin decoherence mechanisms are compared in detail. In our calculation, the spin-orbit coupling is included in each mechanism and is shown to have marked effect in most cases. The equation-of-motion approach is applied in studying both the spin relaxation time T-1 and the spin dephasing time T-2, either in Markovian or in non-Markovian limit. When many levels are involved at finite temperature, we demonstrate how to obtain the spin relaxation time from the Fermi golden rule in the limit of weak spin-orbit coupling. However, at high temperature and/or for large spin-orbit coupling, one has to use the equation-of-motion approach when many levels are involved. Moreover, spin dephasing can be much more efficient than spin relaxation at high temperature, though the two only differ by a factor of 2 at low temperature.
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页数:19
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