Photoluminescence Imaging for Photovoltaic Applications

被引:120
作者
Trupke, T. [1 ,2 ]
Mitchell, B. [2 ]
Weber, J. W. [1 ]
McMillan, W. [1 ]
Bardos, R. A. [1 ]
Kroeze, R. [1 ]
机构
[1] BT Imaging Pty Ltd, Surry Hills, NSW 2010, Australia
[2] Univ New S Wales, Ctr Excellence Photovolta Engn, Sydney, NSW 2052, Australia
来源
INTERNATIONAL CONFERENCE ON MATERIALS FOR ADVANCED TECHNOLOGIES 2011, SYMPOSIUM O | 2012年 / 15卷
关键词
Photoluminescence imaging; silicon; SILICON SOLAR-CELLS; PHOTOCONDUCTANCE LIFETIME MEASUREMENTS; SERIES RESISTANCE; CARRIER LIFETIME; ELECTROLUMINESCENCE; LUMINESCENCE; RADIATION; WAFERS; LAW;
D O I
10.1016/j.egypro.2012.02.016
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Photoluminescence (PL) imaging is a versatile technique for the characterisation of silicon samples across almost the entire photovoltaic (PV) value chain. Within only a few years after the first demonstration of PL imaging on large-area silicon wafers at the University of New South Wales in 2005, this measurement principle has quickly evolved into a standard method for process monitoring in R&D and is now being used at most PV research institutes and leading wafer and solar cell manufacturers. The first part of this paper provides a brief overview on PL imaging and discusses some specific applications and quantitative analysis methods, including spatially resolved calibrated minority carrier lifetime and series resistance measurements. The high resolution and short measurement time of PL imaging also allow a range of applications for inline process monitoring in production. Emphasis is given in the second part of this paper to PL imaging applications in solar cell manufacturing at an early stage of the PV value chain, specifically the characterisation of silicon bricks and ingots prior to wafer cutting and of as-cut wafers prior to solar cell processing. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of the organizing committee of International Conference on Materials for Advanced Technologies.
引用
收藏
页码:135 / 146
页数:12
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