Lateral Control of Indium Content and Wavelength of III-Nitride Diode Lasers by Means of GaN Substrate Patterning

被引：26

作者：

Sarzynski, Marcin ^{[1
,2
]}

Suski, Tadeusz ^{[1
]}

Staszczak, Grzegorz ^{[1
]}

Khachapuridze, Aleksander ^{[1
]}

Domagala, Jaroslaw Z. ^{[3
]}

Czernecki, Robert ^{[1
,2
]}

Plesiewicz, Jerzy ^{[2
]}

Pawlowska, Joanna ^{[2
]}

Najda, Stephen P. ^{[2
]}

Bockowski, Michal ^{[1
,2
]}

Perlin, Piotr ^{[1
,2
]}

Leszczynski, Michal ^{[1
,2
]}

机构：

[1] Inst High Pressure Phys PAS, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, PL-01142 Warsaw, Poland

[3] Inst Phys PAS, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 02期

关键词：

INGAN QUANTUM-WELLS; MISORIENTATION; LAYERS;

D O I：

10.1143/APEX.5.021001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A patterned GaN/sapphire template with separate regions angled between 0.4 and 2 degrees to the wurtzite c-plane was used to grow a 50nm In0.1Ga0.9N layer. The photoluminescence wavelength varied between 403 and 389nm according to the increased region's angle. The indium content measured using X-rays was reduced in regions with a higher miscut angle. Patterned freestanding GaN with separate regions angled by 0.35 and 0.85 degrees to the c-plane was used to fabricate ridge-waveguide diode lasers. Each laser stripe was placed inside one of the angled regions. Lasing wavelengths of 405.8+/-0.2 and 401.0+/-1nm were obtained for devices grown in those regions. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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