Ge doping of GaN beyond the Mott transition

被引：41

作者：

Ajay, A. ^{[1
,2
]}

Schoermann, J. ^{[3
,4
]}

Jimenez-Rodriguez, M. ^{[1
,2
,5
]}

Lim, C. B. ^{[1
,2
]}

Walther, F. ^{[3
,4
]}

Rohnke, M. ^{[7
,8
]}

Mouton, I. ^{[1
,2
]}

Amichi, L. ^{[1
,2
]}

Bougerol, C. ^{[1
,6
]}

Den Hertog, M. I. ^{[1
,6
]}

Eickhoff, M. ^{[3
,4
]}

Monroy, E. ^{[1
,2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA Grenoble, INAC, 17 Ave Martyrs, F-38000 Grenoble, France

[3] Univ Giessen, Inst Phys 1, Heinrich Buff Ring 16, D-35392 Giessen, Germany

[4] Ctr Mat Sci, Heinrich Buff Ring 16, D-35392 Giessen, Germany

[5] Univ Alcala, GRIFO, Dept Elect, Madrid 28871, Spain

[6] CNRS, Inst Neel, 25 Ave Martyrs, F-38000 Grenoble, France

[7] Univ Giessen, Phys Chem Inst, Heinrich Buff Ring 17, D-35392 Giessen, Germany

[8] Univ Giessen, Ctr Mat Sci, Heinrich Buff Ring 17, D-35392 Giessen, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2016年 / 49卷 / 44期

关键词：

GaN; n-doping; Ge; MBE; thin films; SI; GROWTH; GAN(0001); GERMANIUM; NITRIDE; SILICON; STRAIN; BAND;

D O I：

10.1088/0022-3727/49/44/445301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular-beam epitaxy, reaching carrier concentrations of up to 6.7 x 10(20) cm(-3) at 300 K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN: Ge layers present smooth surface morphology with atomic terraces, without trace of pits or cracks, and the mosaicity of the samples has no noticeable dependence on the Ge concentration. The variation of the GaN: Ge band gap with the carrier concentration is consistent with theoretical calculations of the band gap renormalization due to electron-electron and electron-ion interaction, and Burstein-Moss effect.

引用

页数：9

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