Base transport properties of npn SiGe heterojunction bipolar transistors: Physics and modelling

被引：0
作者：
Sokolic, S [1 ]
Amon, S [1 ]
机构：
[1] UNIV LJUBLJANA,FAC ELECT ENGN,LJUBLJANA 1000,SLOVENIA
来源：
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 1996年 / 26卷 / 03期
关键词：
semiconductors; bipolar transistors; HBT; heterojunction bipolar transistors; BJT; bipolar junction transistors; physical properties; comparison of properties; SiGe HBT; SiGe heterojunction bipolar transistors; base transport properties; base transit times; bandgap narrowing; effective mass; collector current; base transit time; Fermi-Dirac statistics; analytical modelling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The base transport properties of npn SiGe heterojunction bipolar transistors (HBTs) are analyzed. Physical effects influencing the electron current in the base and the base transit time are discussed, and the modelling of these effects is described. The results of modelling demonstrate that the improvement of SiGe HBTs compared to Si BJTs increases with cooling and decreases with increasing doping concentration in the base, and that Fermi-Dirac statistics influence significantly the electron current in the base. The analytical approach to the modelling of base transport properties is presented, rendering simple and accurate evaluation of the electron current in the base and the base transit time in the wide range of doping concentrations at 77K and 300K.
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页码：161 / 168
页数：8
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