Thermoelectric properties of boron-rich boride composites prepared through eutectic and peritectic reactions

被引：3

作者：

Goto, T ^{[1
]}

Li, JH ^{[1
]}

Hirai, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98 | 1998年

关键词：

D O I：

10.1109/ICT.1998.740444

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Boron-rich boride composites were prepared by arc-melting in an argon atmosphere, and their microstructures and thermoelectric properties were studied. B4C-TiB2 system was quasi-binary, and the typical lamellar structures indicating a eutectic reaction were observed. The eutectic composition was 25 mol%TiB2, and a 6 mol%TiB2-B4C composite showed the greatest ZT values of 0.55 at 1100 K. The boron-rich region of Si-B-C system contained a peritectic reaction. The specimens consisting of SiB14, B4C and free-Si were prepared. The greatest ZT value of this system was 0.4 at 1100 K for a specimen in which SiB14 is the main phase with several 10 mol% of B4C and free-Si.

引用

页码：574 / 577

页数：4