Temperature and Light Induced Effects on the Capacitance of 4H-SiC Schottky Photodiodes

被引：17

作者：

Mazzillo, Massimo ^{[1
]}

Sciuto, Antonella ^{[2
]}

Catania, Giuseppe ^{[1
]}

Roccaforte, Fabrizio ^{[2
]}

Raineri, Vito ^{[2
]}

机构：

[1] STMicroelect, R&D IMS, I-95121 Catania, Italy

[2] CNR IMM, I-95121 Catania, Italy

来源：

IEEE SENSORS JOURNAL | 2012年 / 12卷 / 05期

关键词：

Capacitance; light irradiance; temperature; 4H-SiC Schottky photodiode;

D O I：

10.1109/JSEN.2011.2166541

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The capacitance plays a key role in determining the timing performances of a detector. To date, this parameter has never been fully investigated in the study of SiC photodiodes electro-optical characteristics. In this paper, we report on the capacitance dependence of interdigitated 4H-SiC Schottky photodiodes on different operating parameters like reverse bias, temperature, light irradiance and illumination wavelength.

引用

页码：1127 / 1130

页数：4

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