Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

被引:109
作者
Kim, Sungjun [1 ]
Chen, Jia [2 ,3 ]
Chen, Ying-Chen [4 ]
Kim, Min-Hwi [5 ,6 ]
Kim, Hyungjin [5 ,6 ]
Kwon, Min-Woo [5 ,6 ]
Hwang, Sungmin [5 ,6 ]
Ismail, Muhammad [1 ]
Li, Yi [2 ,3 ]
Miao, Xiang-Shui [2 ,3 ]
Chang, Yao-Feng [7 ]
Park, Byung-Gook [5 ,6 ]
机构
[1] Chungbuk Natl Univ, Sch Elect Engn, Cheongju 28644, South Korea
[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[3] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
[4] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[5] Seoul Natl Univ, ISRC, Seoul 08826, South Korea
[6] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
[7] Intel Corp, Hillsboro, OR 97124 USA
基金
新加坡国家研究基金会;
关键词
HAFNIUM OXIDE; HIGH-DENSITY; MEMORY; DEVICE; RESISTANCE; MECHANISM; TEMPERATURE; BEHAVIORS; SYSTEM;
D O I
10.1039/c8nr06694a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal-oxide-semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 degrees C up to 145 degrees C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.
引用
收藏
页码:237 / 245
页数:9
相关论文
共 59 条
[1]   Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition [J].
Akbari, Masoud ;
Kim, Min-Kyu ;
Kim, Dongshin ;
Lee, Jang-Sik .
RSC ADVANCES, 2017, 7 (27) :16704-16708
[2]   High-Density and Near-Linear Synaptic Device Based on a Reconfigurable Gated Schottky Diode [J].
Bae, Jong-Ho ;
Lim, Suhwan ;
Park, Byung-Gook ;
Lee, Jong-Ho .
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (08) :1153-1156
[3]   Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism [J].
Bai, Yue ;
Wu, Huaqiang ;
Zhang, Ye ;
Wu, Minghao ;
Zhang, Jinyu ;
Deng, Ning ;
Qian, He ;
Yu, Zhiping .
APPLIED PHYSICS LETTERS, 2013, 102 (17)
[4]   Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure [J].
Chakrabarti, Somsubhra ;
Maikap, Siddheswar ;
Samanta, Subhranu ;
Jana, Surajit ;
Roy, Anisha ;
Qiu, Jian-Tai .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (38) :25938-25948
[5]   Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer [J].
Chand, Umesh ;
Huang, Kuan-Chang ;
Huang, Chun-Yang ;
Tseng, Tseung-Yuen .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) :3665-3670
[6]   Physical and chemical mechanisms in oxide-based resistance random access memory [J].
Chang, Kuan-Chang ;
Chang, Ting-Chang ;
Tsai, Tsung-Ming ;
Zhang, Rui ;
Hung, Ya-Chi ;
Syu, Yong-En ;
Chang, Yao-Feng ;
Chen, Min-Chen ;
Chu, Tian-Jian ;
Chen, Hsin-Lu ;
Pan, Chih-Hung ;
Shih, Chih-Cheng ;
Zheng, Jin-Cheng ;
Sze, Simon M. .
NANOSCALE RESEARCH LETTERS, 2015, 10
[7]   Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor [J].
Chang, Ting ;
Jo, Sung-Hyun ;
Lu, Wei .
ACS NANO, 2011, 5 (09) :7669-7676
[8]   Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide [J].
Chang, Yao-Feng ;
Fowler, Burt ;
Chen, Ying-Chen ;
Zhou, Fei ;
Pan, Chih-Hung ;
Chang, Ting-Chang ;
Lee, Jack C. .
SCIENTIFIC REPORTS, 2016, 6
[9]   Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization [J].
Chang, Yao-Feng ;
Fowler, Burt ;
Chen, Ying-Chen ;
Chen, Yen-Ting ;
Wang, Yanzhen ;
Xue, Fei ;
Zhou, Fei ;
Lee, Jack C. .
JOURNAL OF APPLIED PHYSICS, 2014, 116 (04)
[10]   Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing [J].
Chang, Yao-Feng ;
Fowler, Burt ;
Chen, Ying-Chen ;
Chen, Yen-Ting ;
Wang, Yanzhen ;
Xue, Fei ;
Zhou, Fei ;
Lee, Jack C. .
JOURNAL OF APPLIED PHYSICS, 2014, 116 (04)