Manifestations of Resonant-Tunneling Processes and Random Potential Fluctuations with the Participation of Quantum-Dot Levels in the Photocurrent Relaxation of p-i-n GaAs/AlAs Heterostructures

被引：0

作者：

Khanin, Yu N. ^{[1
]}

Vdovin, E. E. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Problems Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia

来源：

SEMICONDUCTORS | 2021年 / 55卷 / 11期

关键词：

heterostructures; photoconductivity; quantum dots; OSCILLATIONS;

D O I：

10.1134/S1063782621100122

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

As a result of studying the relaxation of photocurrent in p-i-n GaAs/AlAs heterostructures, abrupt features caused by resonant tunneling through the electronic levels of quantum dots in the barrier layers are found. It is shown that the time intervals for the manifestation of these resonances on the relaxation curves are determined by the charge-accumulation dynamics at hole levels of quantum dots and recombination with their participation. Strong random fluctuations of the photocurrent in the postresonant region caused by local fluctuations of the residual charge at hole levels of quantum dots are also found. The study of relaxation in the medium and long-wavelength optical ranges confirms our interpretation of the detected effects.

引用

页码：835 / 839

页数：5

共 9 条

[1] Photoresponse spectra in p-i-n diodes containing quantum dots [J].

Belyaev, AE ;

Vitusevich, SA ;

Eaves, L ;

Main, PC ;

Henini, M ;

Forster, A ;

Reetz, W ;

Danylyuk, SV .

NANOTECHNOLOGY, 2002, 13 (01) :94-96

[2]

Gowar J., 1993, OPTICAL COMMUNICATIO

[3] Quantum Oscillations of Photoconductivity Relaxation in p-i-n GaAs/InAs/AlAs Heterodiodes [J].

Khanin, Yu. N. ;

Vdovin, E. E. .

SEMICONDUCTORS, 2018, 52 (06) :739-744

[4] Period of Photoconductivity Oscillations and Charge Dynamics of Quantum Dots in p-i-n GaAs/InAs/AlAs Heterojunctions [J].

Khanin, Yu. N. ;

Vdovin, E. E. ;

Makarovskii, O. ;

Henini, M. .

JETP LETTERS, 2015, 102 (11) :720-726

[5] Laser Location and Manipulation of a Single Quantum Tunneling Channel in an InAs Quantum Dot [J].

Makarovsky, O. ;

Vdovin, E. E. ;

Patane, A. ;

Eaves, L. ;

Makhonin, M. N. ;

Tartakovskii, A. I. ;

Hopkinson, M. .

PHYSICAL REVIEW LETTERS, 2012, 108 (11)

[6] Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation [J].

Vainberg, V. V. ;

Vasetskii, V. M. ;

Gudenko, Yu. N. ;

Poroshin, V. N. ;

Baidus, N. V. ;

Zvonkov, B. N. .

SEMICONDUCTORS, 2013, 47 (01) :174-177

[7] Effect of the Radiation Power on the Modification of Oscillations of the Photocurrent in Single-Barrier p-i-n GaAs/AlAs/GaAs Heterostructures with InAs Quantum Dots [J].

Vdovin, E. E. ;

Khanin, Yu N. .

JETP LETTERS, 2021, 113 (09) :586-591

[8] Quantum oscillations in the photocurrent of GaAs/AlAs p-i-n diodes [J].

Vdovin, E. E. ;

Ashdown, M. ;

Patane, A. ;

Eaves, L. ;

Campion, R. P. ;

Khanin, Yu. N. ;

Henini, M. ;

Makarovsky, O. .

PHYSICAL REVIEW B, 2014, 89 (20)

[9] Carrier Relaxation in Epitaxial Graphene Photoexcited Near the Dirac Point [J].

Winnerl, S. ;

Orlita, M. ;

Plochocka, P. ;

Kossacki, P. ;

Potemski, M. ;

Winzer, T. ;

Malic, E. ;

Knorr, A. ;

Sprinkle, M. ;

Berger, C. ;

de Heer, W. A. ;

Schneider, H. ;

Helm, M. .

PHYSICAL REVIEW LETTERS, 2011, 107 (23)

← 1 →