Band alignment of Ga2O3/6H-SiC heterojunction

被引：27

作者：

Chang Shao-Hui ^{[1
]}

Chen Zhi-Zhan ^{[1
]}

Huang Wei ^{[1
]}

Liu Xue-Chao ^{[1
]}

Chen Bo-Yuan ^{[1
]}

Li Zheng-Zheng ^{[1
]}

Shi Er-Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 11期

基金：

中国国家自然科学基金;

关键词：

band alignment; Ga2O3/6H-SiC; synchrotron radiation photoelectron spectroscopy; PHOTOELECTRON-SPECTROSCOPY; SILICON-CARBIDE; SEMICONDUCTOR; TEMPERATURE; XPS;

D O I：

10.1088/1674-1056/20/11/116101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga2O3/6H-SiC electronic devices.

引用

页数：4

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