Numerical simulation of LEC growth of InP crystal

被引：0

作者：

Li, MW ^{[1
]}

Zeng, DL ^{[1
]}

机构：

[1] Chongqing Univ, Inst Power Engn, Chongqing 400044, Peoples R China

来源：

PROCEEDINGS OF THE 3RD INTERNATIONAL SYMPOSIUM ON HEAT TRANSFER ENHANCEMENT AND ENERGY CONSERVATION, VOLS 1 AND 2 | 2004年

关键词：

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

A set of numerical analyses for momentum and heat transfer for a 3 inch diameter Liquid Encapsulant Czochralski growth of single-crystal InP with or without an axial magnetic field was carried out. The analyses assume a pseudosteady axisymmetric state with laminar flows. Convective and conductive heat transfers, radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations for melt and crystal are all combined and solved simultaneously. The results show that the Peclet number has a remarkable effect on the crystal/melt interface shape and the melt flow can be suppressed effectively by an imposed axial magnetic field.

引用

页码：666 / 671

页数：6

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