Status of GaN-based green light-emitting diodes

被引：35

作者：

Liu Jun-Lin ^{[1
]}

Zhang Jian-Li ^{[1
]}

Wang Guang-Xu ^{[1
]}

Mo Chun-Lan ^{[1
]}

Xu Long-Quan ^{[1
]}

Ding Jie ^{[1
]}

Quan Zhi-Jue ^{[1
]}

Wang Xiao-Lan ^{[1
]}

Pan Shuan ^{[1
]}

Zheng Chang-Da ^{[1
]}

Wu Xiao-Ming ^{[1
]}

Fang Wen-Qing ^{[1
]}

Jiang Feng-Yi ^{[1
]}

机构：

[1] Nanchang Univ, Natl Engn Technol Res Ctr LED Si Substrate, Nanchang 330047, Peoples R China

来源：

CHINESE PHYSICS B | 2015年 / 24卷 / 06期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

silicon substrate; GaN; green LED; QUANTUM-WELL STRUCTURES; BUFFER LAYER; PLANE GAN; BLUE; GROWTH; ELECTROLUMINESCENCE; TEMPLATES; SUBSTRATE; POWER;

D O I：

10.1088/1674-1056/24/6/067804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaN-based blue light emitting diodes (LEDs) have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency (EQE) of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantum well (QW) with low strain. Many techniques of improving efficiency are discussed, such as inserting AlGaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported: high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm(2), and the relevant techniques are detailed.

引用

页数：8

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