Formation of nanocrystalline CrSi2 layers in Si by ion implantation and pulsed annealing

被引：1

作者：

Batalov, R. I. ^{[2
]}

Bayazitov, R. M. ^{[2
]}

Valeev, V. F. ^{[2
]}

Galkin, N. G. ^{[1
]}

Goroshko, D. L. ^{[1
]}

Galkin, K. N. ^{[1
]}

Chusovitin, E. A. ^{[1
]}

Gaiduk, P. I. ^{[3
]}

Ivlev, G. D. ^{[4
]}

Gatskevich, E. I. ^{[4
]}

机构：

[1] RAS, Inst Automat & Control Proc, Vladivostok 690041, Russia

[2] RAS, Kazan Phys Tech Inst, Kazan 420029, Russia

[3] Belarusian State Univ, Minsk 220050, BELARUS

[4] NAS, BI Stepanov Inst Phys, Minsk 220090, BELARUS

来源：

ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010) | 2011年 / 11卷

关键词：

chromium disilicide; nanocrystals; heterostructures; ion implantation; pulsed annealing; molecular-beam epitaxy; infrared emission; thermoelectrical properties;

D O I：

10.1016/j.phpro.2011.01.010

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work buried nanocrystalline CrSi2 layers were synthesized by ion implantation, pulsed annealing and MBE. The structural, optical and thermoelectrical properties of CrSi2 layers were studied by methods of SEM, TEM, RBS, PL and Seebeck coefficient measurements. The characteristic features of pulsed nanosecond annealing of Cr-implanted Si and epitaxial growth of triple Si/nc-CrSi2/Si heterostructures were established. It is shown that grown Si/nc-CrSi2/Si heterostructures, which preliminary implanted with the high-dose (Phi = 6x10(16) cm(-2)) of Cr+ ions, have the noticeable low temperature (T = 10-100 K) photoluminescence signal at 1450 - 1600 nm and the large Seebeck coefficient (-(60 - 300) mu V/K) in the temperature range of T = 340 - 415 K. (C) 2010 Published by Elsevier B.V.

引用

页码：43 / 46

页数：4

共 10 条

[1]

Borisenko V.E., 2000, Semiconducting Silicides

[2] Morphological, structural and luminescence properties of Si/β-FeSi2/Si heterostructures fabricated by Fe ion implantation and Si MBE [J].

Galkin, N. G. ;

Chusovitin, E. A. ;

Goroshko, D. L. ;

Bayazitov, R. M. ;

Batalov, R. I. ;

Shamirzaev, T. S. ;

Zhuravlev, K. S. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (17) :5319-5326

[3] Influence of Cr+ ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/CrSi2/Si(111) heterostructures [J].

Galkin, N. G. ;

Goroshko, D. L. ;

Galkin, K. N. ;

Vavanova, S. V. ;

Petrushkin, I. A. ;

Maslov, A. M. ;

Batalov, R. I. ;

Bayazitov, R. M. ;

Shustov, V. A. .

TECHNICAL PHYSICS, 2010, 55 (07) :1036-1044

[4] Properties of CrSi2 nanocrystallites grown in a silicon matrix [J].

Galkin, N. G. ;

Dozsa, L. ;

Turchin, T. V. ;

Goroshko, D. L. ;

Pecz, B. ;

Toth, L. ;

Dobos, L. ;

Khanh, N. Q. ;

Cherednichenko, A. I. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (50)

[5]

Lange H, 1997, PHYS STATUS SOLIDI B, V201, P3, DOI 10.1002/1521-3951(199705)201:1<3::AID-PSSB3>3.0.CO

[6]

2-W

[7]

PETUKHOV VY, 1988, PHYS RES, V8, P350

[8] Characteristics of CrSi2 and Cr(Ni)Si2 synthesis in MEVVA ion source implantation and post-annealing processes [J].

Wang, SB ;

Liang, H ;

Zhu, PR .

APPLIED SURFACE SCIENCE, 2000, 153 (2-3) :108-113

[9] ELECTRICAL AND STRUCTURAL-PROPERTIES OF SI/CRSI2/SI HETEROSTRUCTURES FABRICATED USING ION-IMPLANTATION [J].

WHITE, AE ;

SHORT, KT ;

EAGLESHAM, DJ .

APPLIED PHYSICS LETTERS, 1990, 56 (13) :1260-1262

[10] Formation of n-type CrSi2 semiconductor layers on Si by high-current Cr ion implantation [J].

Zhu, HN ;

Gao, KY ;

Liu, BX .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (05) :L49-L52

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