Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

被引：8

作者：

Cordier, Y. ^{[1
]}

Portail, M. ^{[1
]}

Chenot, S. ^{[1
]}

Tottereau, O. ^{[1
]}

Zielinski, M. ^{[2
]}

Chassagne, T. ^{[2
]}

机构：

[1] CRHEA, CNRS, Rue B Gregory,Parc Sophia Antipolis, F-06560 Valbonne, France

[2] NOVASiC, Savoie Technolac, F-73375 Le Bourget Du Lac, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778641

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows reducing the stress in GaN films due to both lower lattice and thermal expansion coefficient mismatch, and can provide better heat dissipation. In this work, we first developed the epitaxial growth of 3C-SiC films on 50 mm Si(111) substrates using chemical vapor deposition. AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these films. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.

引用

页码：1983 / +

页数：2

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