Structural changes induced by implantation with 3 MeV/amu nitrogen ions in GaAs single crystals

The paper is a study of the microstructure of as grown semiconducting arid semi-insulating GaAs crystals, as well as of fine structural changes induced in both materials by the implantation with a 5 x 10(14) cm(-2) dose of 3 MeV/amu nitrogen ions. X-ray measurements were carried out by means of a high-resolution diffractometer. The rocking curves of two as-grown GaAs samples studied are symmetrical. The rocking curve measured for the implanted semi-insulating crystal is broadened, while that for the implanted semiconducting crystal reveals a diffused subsidiary peak on the low angle side of the main maximum, indicating the presence of tensile stresses in the damaged layer at a depth of the mean ion range. The mathematical analysis of the reciprocal space maps gives a quantitative description of the experimental results. (C) 2003 Elsevier B.V. All rights reserved.