Gate-Dependent Orbital Magnetic Moments in Carbon Nanotubes

被引:19
作者
Jespersen, T. S. [1 ,2 ]
Grove-Rasmussen, K. [1 ,2 ,3 ]
Flensberg, K. [1 ,2 ]
Paaske, J. [1 ,2 ]
Muraki, K. [3 ]
Fujisawa, T. [4 ]
Nygard, J. [1 ,2 ]
机构
[1] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark
[2] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen, Denmark
[3] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[4] Tokyo Inst Technol, Res Ctr Low Temp Phys, Meguro Ku, Tokyo 1528551, Japan
关键词
QUANTUM DOTS; SPIN; ELECTRONS; GRAPHENE;
D O I
10.1103/PhysRevLett.107.186802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate how the orbital magnetic moments of electron and hole states in a carbon nanotube quantum dot depend on the number of carriers on the dot. Low temperature transport measurements are carried out in a setup where the device can be rotated in an applied magnetic field, thus enabling accurate alignment with the nanotube axis. The field dependence of the level structure is measured by excited state spectroscopy and excellent correspondence with a single-particle calculation is found. In agreement with band structure calculations we find a decrease of the orbital magnetic moment with increasing electron or hole occupation of the dot, with a scale given by the band gap of the nanotube.
引用
收藏
页数:5
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