Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells

被引：2

作者：

McIndo, C. J. ^{[1
]}

Hayes, D. G. ^{[1
]}

Papageorgiou, A. ^{[1
]}

Hanks, L. A. ^{[1
,4
]}

Smith, G. V. ^{[1
]}

Allford, C. P. ^{[1
,2
]}

Zhang, S. ^{[3
]}

Clarke, E. M. ^{[3
]}

Buckle, P. D. ^{[1
]}

机构：

[1] Cardiff Univ, Sch Phys & Astron, Queens Buildings, Cardiff CF24 3AA, S Glam, Wales

[2] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

[3] North Campus Univ Sheffield, EPSRC, Natl Ctr Technol 3 5, Sheffield S3 7HQ, S Yorkshire, England

[4] Univ Lancaster, Phys Dept, Lancaster LA1 4YB, England

来源：

ADVANCES IN QUANTUM TRANSPORT IN LOW DIMENSIONAL SYSTEMS | 2018年 / 964卷

基金：

英国工程与自然科学研究理事会;

关键词：

CONDUCTANCE;

D O I：

10.1088/1742-6596/964/1/012005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recent reports of magnetotransport measurements of InSb/Al1-xInxSb quantum well structures at low temperature (3 K) have shown the need for inclusion of a new scattering mechanism not present in traditional transport lifetime models. Observations and analysis of characteristic surface structures using differential interference contrast DIC (Nomarski) optical imaging have extracted representative average grain feature sizes for this surface structure and shown these features to be the limiting low temperature scattering mechanism We have subsequently modelled the potential profile of these surface structures using Landauer-Biittiker tunnelling calculations and a combination of a Monte-Carlo simulation and Drude model for mobility. This model matches experimentally measured currents and mobilities at low temperatures, giving a range of possible barrier heights and widths, as well modelling the theoretical trend in mobility with temperature.

引用

页数：6

共 22 条

[1] CALCULATION OF TRANSMISSION TUNNELING CURRENT ACROSS ARBITRARY POTENTIAL BARRIERS [J].

ANDO, Y ;

ITOH, T .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1497-1502

[2] Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures [J].

Asgari, A. ;

Babanejad, S. ;

Faraone, L. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (11)

[3] Quantum Spintronics: Engineering and Manipulating Atom-Like Spins in Semiconductors [J].

Awschalom, David D. ;

Bassett, Lee C. ;

Dzurak, Andrew S. ;

Hu, Evelyn L. ;

Petta, Jason R. .

SCIENCE, 2013, 339 (6124) :1174-1179

[4] LANDAUER CONDUCTANCE FORMULA AND ITS GENERALIZATION TO FINITE VOLTAGES [J].

BAGWELL, PF ;

ORLANDO, TP .

PHYSICAL REVIEW B, 1989, 40 (03) :1456-1464

[5]

Davies J. H., 1998, PHYS LOW DIMENSIONAL

[6] Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device [J].

Deng, M. T. ;

Yu, C. L. ;

Huang, G. Y. ;

Larsson, M. ;

Caroff, P. ;

Xu, H. Q. .

NANO LETTERS, 2012, 12 (12) :6414-6419

[7] Zero-field spin splitting and spin-dependent broadening in high-mobility InSb/In1-xAlxSb asymmetric quantum well heterostructures [J].

Gilbertson, A. M. ;

Branford, W. R. ;

Fearn, M. ;

Buckle, L. ;

Buckle, P. D. ;

Ashley, T. ;

Cohen, L. F. .

PHYSICAL REVIEW B, 2009, 79 (23)

[8] Electron transport lifetimes in InSb/Al1-xInxSb quantum well 2DEGs [J].

Hayes, D. G. ;

Allford, C. P. ;

Smith, G. V. ;

Mcindo, C. ;

Hanks, L. A. ;

Gilbertson, A. M. ;

Cohen, L. F. ;

Zhang, S. ;

Clarke, E. M. ;

Buckle, P. D. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (08)

[9] Controlling a Nanowire Spin-Orbit Qubit via Electric-Dipole Spin Resonance [J].

Li, Rui ;

You, J. Q. ;

Sun, C. P. ;

Nori, Franco .

PHYSICAL REVIEW LETTERS, 2013, 111 (08)

[10]

Madelung O., 2002, LANDOLT BORNSTEIN GR, V41A1b

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