Silicon nitride etching performance of CH2F2 plasma diluted with argon or krypton

被引：17

作者：

Kondo, Yusuke ^{[1
]}

Ishikawa, Kenji ^{[1
]}

Hayashi, Toshio ^{[1
]}

Miyawaki, Yudai ^{[1
]}

Takeda, Keigo ^{[1
]}

Kondo, Hiroki ^{[1
]}

Sekine, Makoto ^{[1
]}

Hori, Masaru ^{[1
]}

机构：

[1] Nagoya Univ, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 04期

关键词：

CFX+ X=1,2,3 ION; DEPOSITED A-C; RADICAL DENSITIES; SURFACE-REACTIONS; SIO2; SELECTIVITY; MECHANISMS; SPECTROSCOPY; DISCHARGE; DIOXIDE;

D O I：

10.7567/JJAP.54.040303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Etching rates of silicon nitrides (SiN), SiO2, and poly-Si films for CH2F2 plasmas diluted with rare gases are presented by comparing the effects of flow rates of CH2F2 and dilution gases (Ar and Kr). The SiO2 etching rate was considered to be controlled by ion fluxes of the incident CHF2+ and CH2F+ under the conditions for the selective etching of SiO2 and SiN over poly-Si. Interestingly, the SiN etching rate was considerably affected by the dilution gas used. The SiN surface reaction was promoted by F-rich chemistry in the Ar-diluted CH2F2 plasma with a relatively high density of F atoms. (c) 2015 The Japan Society of Applied Physics

引用

页数：4

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