Design and fabrication of an alternating dielectric multi-layer device for surface plasmon resonance sensor

被引:68
作者
Lin, CW
Chen, KP
Hsiao, CN
Lin, SM
Lee, CK
机构
[1] Natl Taiwan Univ, Inst Biomed Engn, Coll Engn, Taipei 100, Taiwan
[2] Natl Taiwan Univ, Coll Med, Taipei 100, Taiwan
[3] Natl Taiwan Univ, Dept Elect Engn, Coll Elect Engn & Comp Sci, Taipei 106, Taiwan
[4] Natl Sci Council, Precis Instrument Dev Ctr, Hsinchu 300, Taiwan
[5] Coll Med, Ctr Optoelect Biomed, Taipei 100, Taiwan
[6] Natl Taiwan Univ, Inst Appl Mech, Coll Engn, Taipei 106, Taiwan
[7] Natl Taiwan Univ, Ctr Nano Sci & Technol, Taipei 106, Taiwan
关键词
surface plasmon resonance; dielectric mirror; admittance loci; biosensor;
D O I
10.1016/j.snb.2005.02.044
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
An alternating dielectric multi-layer device was fabricated and tested in the laboratory to show that dielectric mirrors of alternating high/low refractive index materials, based on the design of distributed Bragg reflector (DBR) for vertical cavity surface emission lasers (VCSELs), can be used in designing SPR biochemical sensors. The thickness, number of layers, and other design parameters of the device used were optimized using optical admittance loci analysis. The proof-of-concept device was fabricated with a symmetrical structure using Au/(SiO2/TiO2)(4)/Au. Using a 632 nm-wavelength light source on a BK7 coupling prism, our laboratory tests showed that, under water, there was an 11.5 degrees shift in resonant peak position towards the critical angle (from 74 degrees in a conventional single-layer Au film), and a 3.25 times decrease in FWHM (the half-peak width). Our design also resulted in a wider dynamic range of up to a 1.50 refractive index unit (RIU), compared to 1.38 RIU in a conventional single-layer Au film. Using glucose solutions in ddH(2)O, the calculated resolution was 1.28 x 10(-5). The calculated intensity sensitivity was 10000 a.u./RIU, about twice the improvement over the conventional single-layer Au film. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:169 / 176
页数:8
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