Silicon membrane nanofilters from sacrificial oxide removal

被引:47
作者
Chu, WH
Chin, R
Huen, T
Ferrari, M
机构
[1] Univ Calif Berkeley, Biomed Microdevices Ctr, Berkeley, CA 94720 USA
[2] Ohio State Univ, Dept Mech Engn, Dept Internal Med, Biomed Engn Ctr, Columbus, OH 43210 USA
关键词
microfilter; nanofilter; sacrificial oxide;
D O I
10.1109/84.749400
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon micropore filter designs using a sacrificial oxide removal technique are described. These filters utilize surface and bulk micromachining for precise control of pare sizes in the tens of nanometers range. The semipermeable membrane of the sacrificial layer filters (SLF's) is typically composed of sandwiched p(+) polysilicon/oxide/p(+) silicon layers where the sacrificial oxide between the two silicon layers determines the pore size of the filter. The purpose of this paper is to address special design and fabrication considerations for control of pore size uniformity within 10%, adapting surface conditions for filtration fluxes of deionized water to fall in the range of 1 ml/cm(2)h, and maximization of the structural response of SLF's. Fluorescent beads are used to analyze the pore size uniformity of fabricated filters, with achievements of four-log reduction in fluorescent bead concentration. [298].
引用
收藏
页码:34 / 42
页数:9
相关论文
共 29 条
[1]   Characteristics of the thermal oxidation of heavily boron-doped polycrystalline silicon thin films [J].
Boukezzata, M ;
BielleDaspet, D ;
Sarrabayrouse, G ;
Mansour, F .
THIN SOLID FILMS, 1996, 279 (1-2) :145-154
[2]   Biotechnology at low Reynolds numbers [J].
Brody, JP ;
Yager, P ;
Goldstein, RE ;
Austin, RH .
BIOPHYSICAL JOURNAL, 1996, 71 (06) :3430-3441
[3]  
BRODY JP, 1996, SOL STAT SENS ACT WO, P105
[4]   Silicon-micromachined direct-pore filters for ultrafiltration [J].
Chu, W ;
Huen, T ;
Tu, J ;
Ferrari, M .
MICRO- AND NANOFABRICATED ELECTRO-OPTICAL MECHANICAL SYSTEMS FOR BIOMEDICAL AND ENVIRONMENTAL APPLICATIONS, PROCEEDINGS OF, 1997, 2978 :111-122
[5]  
Chu WH, 1995, P SOC PHOTO-OPT INS, V2593, P9, DOI 10.1117/12.228643
[6]   A STUDY OF RESIDUAL-STRESS DISTRIBUTION THROUGH THE THICKNESS OF P(+) SILICON FILMS [J].
CHU, WH ;
MEHREGANY, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (07) :1245-1250
[7]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[8]   THERMAL OXIDATION OF HEAVILY DOPED SILICON [J].
DEAL, BE ;
SKLAR, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :430-+
[9]   HIGH-RESOLUTION REMOVAL OF VIRUS FROM PROTEIN SOLUTIONS USING A MEMBRANE OF UNIQUE STRUCTURE [J].
DILEO, AJ ;
ALLEGREZZA, AE ;
BUILDER, SE .
BIO-TECHNOLOGY, 1992, 10 (02) :182-188
[10]  
DING X, 1990, SENSOR ACTUAT A-PHYS, V21, P866