Effects of dopants on the electrical behavior of grain boundary in metal-induced crystallized polysilicon film

被引：7

作者：

Chan, ACK ^{[1
]}

Cheng, CF ^{[1
]}

Chan, MS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 08期

关键词：

polysilicon; thin-film transistor (TFT);

D O I：

10.1109/TED.2005.852735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of doping on the electrical behavior of grain boundary in large grain polysilicon-on-insulator (LPSOI) film formed by metal-induced lateral crystallization (MILC) with nickel is studied. It is found that N-channel MOSFETs formed on LPSOI film exhibits larger leakage current and more susceptible to punchthrough compared with P-channel MOSFETs. Strong correlation between leakage current of the devices and the electrical property of a single longitudinal grain boundary is observed. Through careful process calibration and experimental characterization, the effects of dopant on nickel atom diffusion and final transistor characteristics are reported.

引用

页码：1917 / 1919

页数：3

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