Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates

被引：3

作者：

Zinovyev, V. A. ^{[1
]}

Kacyuba, A., V ^{[1
]}

Volodin, V. A. ^{[1
,2
]}

Zinovieva, A. F. ^{[1
,2
]}

Cherkova, S. G. ^{[1
]}

Smagina, Zh, V ^{[1
]}

Dvurechenskii, A., V ^{[1
,2
]}

Krupin, A. Y. ^{[3
]}

Borodavchenko, O. M. ^{[4
]}

Zhivulko, V. D. ^{[4
]}

Mudryi, A., V ^{[4
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia

[4] Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS

来源：

SEMICONDUCTORS | 2021年 / 55卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

calcium silicides; calcium fluoride; molecular-beam epitaxy; electron irradiation; atomic structure; photoluminescence; FILMS; SILICIDE;

D O I：

10.1134/S1063782621090268

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The specific features of growth and the structural and optical properties of GaSi2 layers formed by the successive deposition of Si and CaF2 onto a Si(111) substrate with simultaneous irradiation with a high-energy electron beam are studied. The Raman spectra recorded for the electron-beam-irradiated regions exhibit peaks characteristic of CaSi2 crystal layers. Studies of the surface morphology of the structures formed show that, under the conditions of synthesis chosen, the formation of CaSi2 layers upon electron irradiation proceeds by a two-dimensional layer mechanism. The photoluminescence spectra recorded for the regions modified by the electron beam greatly differ from the spectra recorded outside these regions.

引用

页码：808 / 811

页数：4

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