Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots

被引：4

作者：

Chang, Y. C. ^{[1
]}

Robson, A. J. ^{[1
]}

Harrison, S. ^{[1
]}

Zhuang, Q. D. ^{[1
]}

Hayne, M. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

AIP ADVANCES | 2015年 / 5卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

GAAS-ALXGA1-XAS SINGLE HETEROJUNCTIONS; 2-DIMENSIONAL ELECTRONS; DROPLET EPITAXY; RELAXATION; MAGNETOOPTICS; LUMINESCENCE; TEMPERATURE; SUBSTRATE; STATES;

D O I：

10.1063/1.4922950

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1-xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect. (C) 2015 Author(s).

引用

页数：6

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