Influence of Si3N4 passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structures

被引：0

作者：

Liu, YW ^{[1
]}

Wang, H ^{[1
]}

机构：

[1] Nanyang Technol Univ, Microelect Ctr, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

2005 International Conference on Indium Phosphide and Related Materials | 2005年

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structures has been studied. An increase in effective mobility mu(e) with a negligible change of sheet carrier density n(s) after SiN deposition is clearly observed. Our results suggest that the enhancement of mu(e) could be explained under the framework of electrons transfer from the InP sub-channel into InGaAs channel region due to the energy band bending at surface region caused by SiN passivation.

引用

页码：520 / 522

页数：3

共 4 条

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