A Compact EADFB Laser Array Module for a Future 100-Gb/s Ethernet Transceiver

被引：43

作者：

Kanazawa, Shigeru ^{[1
]}

Fujisawa, Takeshi ^{[1
]}

Ohki, Akira ^{[1
]}

Ishii, Hiroyuki ^{[1
]}

Nunoya, Nobuhiro ^{[1
]}

Kawaguchi, Yoshihiro ^{[1
]}

Fujiwara, Naoki ^{[1
]}

Takahata, Kiyoto ^{[1
]}

Iga, Ryuzo ^{[1
]}

Kano, Fumiyoshi ^{[1
]}

Oohashi, Hiromi ^{[1
]}

机构：

[1] NTT Corp, Nippon Telegraph & Tel NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 05期

关键词：

Distributed feedback laser; electro-absorption modulator; EADFB laser array; InGaAlAs; photonic-integrated circuits; 100-Gb Ethernet; LOW-DRIVING-VOLTAGE; ELECTROABSORPTION MODULATORS;

D O I：

10.1109/JSTQE.2011.2124446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact electroabsorption modulators integrated distributed feedback (EADFB) laser array module has been developed for 100-Gb/s Ethernet. Four 25-Gb/s EADFB lasers and an optical multiplexer are monolithically integrated on one chip in an area of only 2 mm x 2.6 mm. As a result, a compact 12 mm x 20 mm EADFB laser array module is achieved. A bridge-type RF circuit board is employed to transmit high-frequency, 4 x 25-Gb/s, electrical signals effectively in a narrow package and improve the electrical/optical response of the module. The module has a 3-dB frequency bandwidth of 20 GHz for the four lanes assigned in 100-Gb/s Ethernet. Furthermore, the possibility of realizing low-driving voltage operation is investigated to reduce the power consumption of the module. An error-free transmission through 10 km of single-mode fiber at 100 Gb/s with a modulation voltage of only 1 V is demonstrated.

引用

页码：1191 / 1197

页数：7

共 12 条

[1] 25 Gbit/s 1.3 μm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system [J].

Fujisawa, T. ;

Arai, M. ;

Fujiwara, N. ;

Kobayashi, W. ;

Tadokoro, T. ;

Tsuzuki, K. ;

Akage, Y. ;

Iga, R. ;

Yamanaka, T. ;

Kano, F. .

ELECTRONICS LETTERS, 2009, 45 (17) :900-901

[2]

FUJISAWA T, 2010, P OPTOEELECTRON COMM, P50

[3] Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s [J].

Fukano, Hideki ;

Yamanaka, Takayuki ;

Tamura, Munehisa ;

Kondo, Yasuhiro .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (05) :2219-2224

[4] Inductance-controlled electroab sorption modulator modules using the flip-chip bonding technique [J].

Hatta, T ;

Miyahara, T ;

Ishizaki, M ;

Okada, N ;

Zaizen, S ;

Motoshima, K ;

Kasahara, K .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2005, 23 (02) :582-587

[5] STRAINED INGAAS/INALAS MQW ELECTROABSORPTION MODULATORS WITH LARGE BANDWIDTH AND LOW DRIVING VOLTAGE [J].

IDO, T ;

SANO, H ;

MOSS, DJ ;

TANAKA, S ;

TAKAI, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (10) :1207-1209

[6] Electro-absorption modulator integrated lasers with enhanced signal injection efficiency [J].

Lim, Cheng Guan .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2008, 26 (5-8) :685-691

[7]

Makino S, 2008, P OPT FIB COMM C OFC, pPDP21

[8]

Nelson S., 1991, P IEEE MTT BOST MA, P1071

[9]

OOMORI H, 2008, P EUR C OPT COMM ECO

[10]

SAITO T, 2009, P EUR C OPT COMM ECO

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