A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping

被引：18
作者：
Tiwari, Pramod Kumar [1 ]
Jit, S. [1 ]
机构：
[1] Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Ctr Res Microelect CRME, Varanasi 221005, Uttar Pradesh, India
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2010年 / 10卷 / 02期
关键词：
DG MOSFET; ATLAS simulation; 2D potential; subthreshold swing; effective conduction path effect (ECPE); gaussian doped channel; COMPACT MODEL; THRESHOLD VOLTAGE; SOI MOSFETS; PERFORMANCE; SIMULATION; DEVICE; SLOPE;
D O I：
10.5573/JSTS.2010.10.2.107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthreshold swing characteristics for non-uniformly doped device has been investigated. The model also includes the effect of various device parameters on the subthreshold swing characteristics of DG MOSFETs. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained by using the commercially available ATLAS (TM) device simulator. The model is believed to provide a better physical insight and understanding of DG MOSFET devices operating in the subthreshold regime.
引用
收藏
页码：107 / 117
页数：11
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