AlInP-GaInP-GaAs UV-enhanced photovoltaic detectors grown by gas source MBE

被引：5
作者：
Zhang, YG [1 ]
Gu, Y [1 ]
Zhu, C [1 ]
Li, AZ [1 ]
Liu, TD [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 06期
关键词：
AlInP-GaInP; molecular beam epitaxy (MBE); photodetectors; photovoltaic;
D O I：
10.1109/LPT.2005.846485
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Al0.52In0.48P-Ga0.51In0.49P-GaAs photovoltaic detectors using GaInP as the light absorption layer and AlInP as the widow layer have been fabricated by using gas source molecular beam epitaxy, and their performance has been characterized in detail. The detectors show infrared-blind and ultraviolet-enhanced features and have good response in visible band, which makes them a good candidate in certain applications. Excellent performance has been demonstrated on the detectors, a resistance area product of R(0)A = 1.3 x 10(8) Omega (.) cm(2), and an open-circuit voltage of V-oc > 1.05 V have been measured at room temperature.
引用
收藏
页码：1265 / 1267
页数：3
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