Atomic structure of misfit dislocations in nonpolar ZnO/Al2O3 heterostructures

被引：14

作者：

Zhou, H. ^{[1
,2
]}

Chisholm, M. F. ^{[2
]}

Pant, P. ^{[1
]}

Chang, H. J. ^{[2
]}

Gazquez, J. ^{[2
]}

Pennycook, S. J. ^{[2
]}

Narayan, J. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 12期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; atomic structure; dislocations; II-VI semiconductors; optical properties; scanning electron microscopy; semiconductor heterojunctions; transmission electron microscopy; wide band gap semiconductors; zinc compounds; GRAIN-BOUNDARIES; EPITAXY; FILMS;

D O I：

10.1063/1.3489687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Understanding dislocation core structures at the atomic level is of significant theoretical and technological importance because of the role dislocations play in the electronic/optical properties of materials. In this paper, we report our aberration-corrected scanning transmission electron microscopy study on misfit dislocation core structures at non-polar (11 (2) over bar0)ZnO/(1 (1) over bar 02)Al2O3 (a-ZnO/r-Al2O3) interface. The atomic configuration of the core structure is found to be closely related to the preferred interfacial bonding configuration. A significant number of these misfit dislocations have undergone a core structure modification involving the incorporation of Zn in the Al2O3 side of the dislocation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489687]

引用

页数：3

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