Spin-Dependent Transport Of Holes In Silicon Quantum Wells Confined By Superconductor Barriers

被引：0

作者：

Bagraev, N. T. ^{[1
]}

Gehlhoff, W. ^{[2
]}

Klyachkin, L. E. ^{[1
]}

Kudryavtsev, A. A. ^{[1
]}

Malyarenko, A. M. ^{[1
]}

Romanov, V. V. ^{[3
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, D-10623 Berlin, Germany

[3] Polytech Univ, St Petersburg 195251, Russia

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

关键词：

quantum well; superconductor barrier; critical current; conductance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the findings of spin-dependent single-hole and pair-hole transport across the p-type high mobility silicon quantum well (Si-QW) confined by the superconductor delta-barriers on the n-type Si (100) surface. The oscillations of the conductance in normal state and the zero-resistance supercurrent in superconductor state as a function of the bias voltage are found to be correlated by on- and off-resonance tuning the two-dimensional subbands of holes with the Fermi energy in the superconductor barriers.

引用

页码：431 / +

页数：2

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