Trimeric precursors in formation of Al magic clusters on a Si(111)-7 x 7 surface

The formation process of Al magic clusters on the Si(111)-7 x 7 surface was investigated by means of a variable-temperature scanning tunneling microscope (STM) in situ and was interpreted using density-functional theory (DFT) calculations. At a growth temperature of 450 degrees C, Al atoms hopped among the corner, center, and T4 sites and also across the dimer rows on the Si(111)-7 x 7 surface. At low coverage below 0.08 ML, a single Al atom was adsorbed on the corner or center site. When the coverage was increased to 0.08 ML, Al dimers and trimers appeared, and Al magic clusters were also observed. However, no Al tetramers or pentamers were experimentally confirmed. Careful analysis of STM images suggests that Al trimers could be key precursors for the formation of Al magic clusters, and DFT calculations verified this interpretation. Total-energy calculation results using DFT reveal that this is due to the small energy gain from Al trimer to Al tetramer. These results are important for understanding the atomic structure and the formation mechanism of the magic clusters on the Si(111)-7 x 7 surface.