Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon

被引：0
作者：
Hu, Kuan-Kan [1 ]
Liang, Shin-Yang [1 ]
Woon, Wei Yen [1 ]
机构：
[1] Natl Cent Univ, Dept Phys, Jhongli 32054, Taiwan
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 02期
关键词：
CARBON INCORPORATION; SI; RECRYSTALLIZATION;
D O I：
10.7567/APEX.8.021302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Solid-phase-epitaxial-regrowth (SPER) dynamics of ion-implanted silicon were studied through in situ time-resolved reflectivity measurements. The roles of strain induced by dopant and isovalent impurities with different atomic sizes were disentangled by considering the actual Fermi-level shifting and effective strain induced by partial impurities, as obtained from Hall measurements and high-resolution X-ray diffraction. Contrary to in the previous model, SPER rate retardation was found in the cases of both isovalent-impurity-induced tensile and compressive strain. We propose a modified model incorporating strain into generalized Fermi-level shifting to inclusively explain the SPER dynamics. (C) 2015 The Japan Society of Applied Physics
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相关论文
共 22 条
[1]   Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500-600 degrees C [J].
Antonell, MJ ;
Jones, KS ;
Haynes, TE .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7646-7651
[2]   Effect of impurities on thermal stability of pseudomorphically strained Si:C layer [J].
Chuang, Yao-Teng ;
Wang, Sheng-Hao ;
Woon, Wei-Yen .
APPLIED PHYSICS LETTERS, 2011, 98 (14)
[3]   Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films [J].
D'Angelo, D. ;
Romano, L. ;
Crupi, I. ;
Carria, E. ;
Privitera, V. ;
Grimaldi, M. G. .
APPLIED PHYSICS LETTERS, 2008, 93 (23)
[4]  
Hoyt J. L., 2002, SILICON GERMANIUM CA
[5]   Dopant effects on solid phase epitaxy in silicon and germanium [J].
Johnson, B. C. ;
Ohshima, T. ;
McCallum, J. C. .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (03)
[6]   Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium [J].
Johnson, B. C. ;
Gortmaker, P. ;
McCallum, J. C. .
PHYSICAL REVIEW B, 2008, 77 (21)
[7]   Shallow junction doping technologies for ULSI [J].
Jones, EC ;
Ishida, E .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1998, 24 (1-2) :1-80
[8]   INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].
KENNEDY, EF ;
CSEPREGI, L ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246
[9]  
Olson G. L., 1988, Material Science Reports, V3, P1, DOI 10.1016/S0920-2307(88)80005-7
[10]   Substitutional carbon incorporation in epitaxial Si1-yCy alloys on Si(001) grown by molecular beam epitaxy [J].
Osten, HJ ;
Griesche, J ;
Scalese, S .
APPLIED PHYSICS LETTERS, 1999, 74 (06) :836-838
123